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| SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - AUGUST 1997 ZDT1147 C1 C1 C2 C2 PARTMARKING DETAIL - ZDT1147 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB T j:T stg VALUE -15 -12 -5 -20 -5 -500 -55 to +150 UNIT V V V A A mA C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at T amb = 25C* Any single die "on" Both die "on" equally Derate above 25C* Any single die "on" Both die "on" equally Thermal Resistance - Junction to Ambient* Any single die "on" Both die "on" equally SYMBOL P tot 2.0 2.75 18 22 55.6 45.5 W W mW/ C mW/ C C/ W C/ W VALUE UNIT * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT1147 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. -15 TYP. -35 MAX. UNIT V CONDITIONS. IC=-100A Collector-Base Breakdown V(BR)CBO Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Collector-Emitter Saturation Voltage VCES -12 -25 V IC=-100A IC=-10mA VCEO -12 -25 V VCEV -12 -25 V IC=-100A, VEB=+1V V(BR)EBO -5 -8.5 V IE=-100A VCB=-12V VEB=-4V VCES=-10V ICBO IEBO ICES -0.3 -0.3 -0.3 -100 -100 -100 nA nA nA VCE(sat) -25 -70 -90 -115 -250 -950 -50 -110 -130 -170 -380 -1050 mV mV mV mV mV mV IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-5A, IB=-50mA* IC=-5A, IB=-50mA* Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) -905 -1000 mV IC=-5A, VCE=-2V* hFE 270 250 200 150 90 450 400 340 250 160 60 115 850 IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-5A, VCE=-2V* IC=-10A, VCE=-2V* IC=-20A, VCE=-2V* MHz IC=-50mA, VCE=-10V f=50MHz VCB=-10V, f=1MHz IC=-4A, IB=-40mA, VCC=-10V IC=-4A, IB=40mA, VCC=-10V Transition Frequency fT Output Capacitance CCB ton 80 150 220 pF ns ns Switching Times toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ZDT1147 TYPICAL CHARACTERISTICS 1.0 +25C 1.0 IC/IB=100 0.8 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.6 0.4 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.6 -55C +25C +100C 0.4 0.2 0.2 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 750 VCE=2V 1.6 IC/IB=100 hFE - Typical Gain 1.2 +100C +25C -55C VBE(sat) - (V) 500 0.8 250 0.4 -55C +25C +100C 0 1m 10m 100m 1 10 100 0 1m 10m 100m 1 10 100 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.4 VCE=2V 100 1.2 1.0 IC - Collector Current (A) VBE(on) - (V) 10 0.8 0.6 0.4 0.2 0 1m 10m 100m 1 10 100 -55C +25C +100C 1 DC 1s 100ms 10ms 1ms 100us 100m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area |
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